IPT60R145CFD7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 19A 8HSOF
$5.77
Available to order
Reference Price (USD)
1+
$5.77000
500+
$5.7123
1000+
$5.6546
1500+
$5.5969
2000+
$5.5392
2500+
$5.4815
Exquisite packaging
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Boost your electronic applications with IPT60R145CFD7XTMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPT60R145CFD7XTMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 116W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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