IPW50R350CP
Infineon Technologies
Infineon Technologies
N-CHANNEL POWER MOSFET
$1.13
Available to order
Reference Price (USD)
1+
$1.13000
500+
$1.1187
1000+
$1.1074
1500+
$1.0961
2000+
$1.0848
2500+
$1.0735
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IPW50R350CP, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPW50R350CP delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 370µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
Related Products
onsemi
NTD4910N-35G
Diodes Incorporated
DMTH3004LK3Q-13
Infineon Technologies
IPD90P04P4L04ATMA2
Panjit International Inc.
PJL9411_R2_00001
IXYS
IXFA22N60P3
Texas Instruments
CSD16408Q5
IXYS
IXFK20N120P
onsemi
FDMS2572
STMicroelectronics
STP7NK80Z
Central Semiconductor Corp