IPW60R045CPAFKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 60A TO247-3
$24.71
Available to order
Reference Price (USD)
240+
$14.68846
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPW60R045CPAFKSA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPW60R045CPAFKSA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 431W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
Related Products
onsemi
NVB110N65S3F
Vishay Siliconix
SQS850EN-T1_GE3
Rectron USA
RM21N650TI
Infineon Technologies
IPP60R125CFD7XKSA1
Toshiba Semiconductor and Storage
SSM3K361TU,LF
onsemi
FQA65N20
Infineon Technologies
IPP120N06S403AKSA1
STMicroelectronics
STF16N60M6
Toshiba Semiconductor and Storage
TK3R1P04PL,RQ
STMicroelectronics