IPW60R070CFD7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 31A TO247-3
$9.07
Available to order
Reference Price (USD)
1+
$8.89000
10+
$8.06300
240+
$6.73129
720+
$5.73294
1,200+
$5.06738
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IPW60R070CFD7XKSA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPW60R070CFD7XKSA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 760µA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-21
- Package / Case: TO-247-3
Related Products
Panjit International Inc.
PJQ4414P_R2_00001
Nexperia USA Inc.
PXN012-60QLJ
Toshiba Semiconductor and Storage
SSM3K339R,LF
Infineon Technologies
SP000629364
Alpha & Omega Semiconductor Inc.
AOB11S60L
Rohm Semiconductor
R6006KND3TL1
Fairchild Semiconductor
FCP170N60
Infineon Technologies
IRFH5250TRPBF
onsemi
NVMFS5C460NT1G
IXYS Integrated Circuits Division