IPW65R029CFD7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 69A TO247-3
$18.56
Available to order
Reference Price (USD)
1+
$18.56000
500+
$18.3744
1000+
$18.1888
1500+
$18.0032
2000+
$17.8176
2500+
$17.632
Exquisite packaging
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Upgrade your electronic designs with IPW65R029CFD7XKSA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IPW65R029CFD7XKSA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 305W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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