IPW65R050CFD7AXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 45A TO247-3-41
$14.39
Available to order
Reference Price (USD)
1+
$14.39000
500+
$14.2461
1000+
$14.1022
1500+
$13.9583
2000+
$13.8144
2500+
$13.6705
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPW65R050CFD7AXKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPW65R050CFD7AXKSA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
- Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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