IPW65R145CFD7AXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 17A TO247-3
$7.35
Available to order
Reference Price (USD)
1+
$7.35000
500+
$7.2765
1000+
$7.203
1500+
$7.1295
2000+
$7.056
2500+
$6.9825
Exquisite packaging
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Upgrade your electronic designs with IPW65R145CFD7AXKSA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IPW65R145CFD7AXKSA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 420µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 98W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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