IPWS65R035CFD7AXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 63A TO247-3-41
$22.28
Available to order
Reference Price (USD)
1+
$22.28000
500+
$22.0572
1000+
$21.8344
1500+
$21.6116
2000+
$21.3888
2500+
$21.166
Exquisite packaging
Discount
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Optimize your electronic systems with IPWS65R035CFD7AXKSA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPWS65R035CFD7AXKSA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 305W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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