IPZA60R024P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 101A TO247-4-3
$16.38
Available to order
Reference Price (USD)
1+
$16.37900
500+
$16.21521
1000+
$16.05142
1500+
$15.88763
2000+
$15.72384
2500+
$15.56005
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IPZA60R024P7XKSA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPZA60R024P7XKSA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2.03mA
- Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7144 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 291W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-3
- Package / Case: TO-247-4
Related Products
Infineon Technologies
IPS65R400CEAKMA1
STMicroelectronics
STD11NM65N
Vishay Siliconix
SI7456DP-T1-GE3
UnitedSiC
UJ3C065030T3S
Texas Instruments
CSD13302WT
STMicroelectronics
STF7NM60N
STMicroelectronics
STB12NM50T4
onsemi
NTMFS011N15MC
IXYS
IXTK150N15P
Renesas Electronics America Inc