IRF1010NSTRRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 85A D2PAK
$1.34
Available to order
Reference Price (USD)
1+
$1.33896
500+
$1.3255704
1000+
$1.3121808
1500+
$1.2987912
2000+
$1.2854016
2500+
$1.272012
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IRF1010NSTRRPBF by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IRF1010NSTRRPBF inquire now for more details!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
STMicroelectronics
STU8NM50N
onsemi
ATP302-TL-H
Infineon Technologies
IPB240N03S4LR9ATMA1
IXYS
IXTX46N50L
onsemi
2N7002ET1G
onsemi
FQPF630
onsemi
NVMFD6H852NLWFT1G
Rohm Semiconductor
R6511END3TL1
Wolfspeed, Inc.
E3M0120090D
Alpha & Omega Semiconductor Inc.