IRF40DM229
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 159A DIRECTFET
$2.46
Available to order
Reference Price (USD)
4,800+
$0.94380
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IRF40DM229 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IRF40DM229 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 159A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.85mOhm @ 97A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5317 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DirectFET™ Isometric MF
- Package / Case: DirectFET™ Isometric MF
Related Products
Toshiba Semiconductor and Storage
TK72E08N1,S1X
Fairchild Semiconductor
FQU2N80TU
onsemi
MMSF3P02HDR2G
onsemi
NTD110N02RG
Toshiba Semiconductor and Storage
SSM3K15ACTC,L3F
Vishay Siliconix
SQJQ466E-T1_GE3
onsemi
NTLJS3A18PZTXG
Infineon Technologies
IPB320N20N3GATMA1
Vishay Siliconix
SI2325DS-T1-BE3
Rohm Semiconductor