IRF5802TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 900MA MICRO6
$0.76
Available to order
Reference Price (USD)
3,000+
$0.22266
6,000+
$0.20974
15,000+
$0.19681
30,000+
$0.18777
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IRF5802TRPBF, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IRF5802TRPBF for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro6™(TSOP-6)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
onsemi
NTHL020N090SC1
Taiwan Semiconductor Corporation
TQM025NB04CR RLG
Diodes Incorporated
MMBF170-7-F
onsemi
HUF76439S3ST
Rohm Semiconductor
RD3H080SPFRATL
onsemi
FDB0630N1507L
IXYS
IXTP08N100D2
Nexperia USA Inc.
PMV37EN2R
Fairchild Semiconductor
HUFA75321S3ST
STMicroelectronics