IRF840ASTRRPBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 500V 8A D2PAK
$3.26
Available to order
Reference Price (USD)
1+
$3.26000
500+
$3.2274
1000+
$3.1948
1500+
$3.1622
2000+
$3.1296
2500+
$3.097
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IRF840ASTRRPBF from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IRF840ASTRRPBF delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IPI60R385CP
onsemi
NTGS3441T1G
Renesas Electronics America Inc
2SK160A-L-A
Rectron USA
RM12P30S8
Vishay Siliconix
SIHB33N60ET1-GE3
Nexperia USA Inc.
BSS138BKW,115
Diodes Incorporated
DMT6013LFDF-13
onsemi
NTB5426NT4G
Toshiba Semiconductor and Storage
TK14N65W,S1F
Infineon Technologies