IRF9510PBF-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 100V 4A TO220AB
$1.16
Available to order
Reference Price (USD)
1+
$1.16000
500+
$1.1484
1000+
$1.1368
1500+
$1.1252
2000+
$1.1136
2500+
$1.102
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IRF9510PBF-BE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IRF9510PBF-BE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 43W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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