IRF9630STRLPBF
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 200V 6.5A D2PAK
$3.05
Available to order
Reference Price (USD)
800+
$1.72589
1,600+
$1.59161
2,400+
$1.48832
5,600+
$1.43667
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IRF9630STRLPBF by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IRF9630STRLPBF inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 74W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Diodes Incorporated
DMTH4004SCTB-13
onsemi
FDD8880
Infineon Technologies
ISC015N04NM5ATMA1
onsemi
NTMFS5C645NLT3G
STMicroelectronics
STL190N4F7AG
Vishay Siliconix
SIHH26N60E-T1-GE3
Diodes Incorporated
DMP1045U-7
Diodes Incorporated
DMN10H220LVT-7
Diotec Semiconductor
DI015N25D1
IXYS