IRFB4227PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 200V 65A TO220AB
$3.86
Available to order
Reference Price (USD)
1+
$3.52000
10+
$3.16800
100+
$2.63450
500+
$2.17224
1,000+
$1.86408
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IRFB4227PBF from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IRFB4227PBF delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
STMicroelectronics
STS5NF60L
Vishay Siliconix
SQ9407EY-T1_GE3
Infineon Technologies
SPP12N50C3
Alpha & Omega Semiconductor Inc.
AOWF8N50
Renesas Electronics America Inc
TBB1010KMTL-E
Vishay Siliconix
SIHG73N60E-GE3
onsemi
NTMFS4835NT3G
Alpha & Omega Semiconductor Inc.
AOD2N60
STMicroelectronics
STF10N95K5
STMicroelectronics