IRFBE30PBF-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 4.1A TO220AB
$2.35
Available to order
Reference Price (USD)
1+
$2.35000
500+
$2.3265
1000+
$2.303
1500+
$2.2795
2000+
$2.256
2500+
$2.2325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with IRFBE30PBF-BE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IRFBE30PBF-BE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Infineon Technologies
AUIRFS3006-7P
Toshiba Semiconductor and Storage
TK20V60W,LVQ
IXYS
IXTP2N100
Infineon Technologies
IRFB4321PBF
onsemi
NVMFS5C645NT1G
STMicroelectronics
STP180N4F6
Vishay Siliconix
SQM60N06-15_GE3
Toshiba Semiconductor and Storage
SSM3J372R,LXHF
Vishay Siliconix
SQJA70EP-T1_BE3
onsemi