IRFF9122
Harris Corporation
Harris Corporation
P-CHANNEL POWER MOSFET
$1.13
Available to order
Reference Price (USD)
1+
$1.13000
500+
$1.1187
1000+
$1.1074
1500+
$1.0961
2000+
$1.0848
2500+
$1.0735
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IRFF9122, a high-quality Transistors - FETs, MOSFETs - Single from Harris Corporation. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IRFF9122 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 20W
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-205AF (TO-39)
- Package / Case: TO-205AF Metal Can
Related Products
Fairchild Semiconductor
HUFA76419D3ST
onsemi
NTD110N02RT4
Alpha & Omega Semiconductor Inc.
AOWF380A60C
Vishay Siliconix
SQ3426EV-T1_GE3
onsemi
NTD4804N-35G
Infineon Technologies
IPB65R310CFDAATMA1
Renesas Electronics America Inc
2SK3140-E
onsemi
NTMJS1D2N04CLTWG
Fairchild Semiconductor
FDA20N50
Vishay Siliconix