IRL100HS121
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 11A 6PQFN
$1.34
Available to order
Reference Price (USD)
4,000+
$0.46416
8,000+
$0.44350
12,000+
$0.42874
Exquisite packaging
Discount
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Experience the power of IRL100HS121, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IRL100HS121 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 11.5W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-PQFN Dual (2x2)
- Package / Case: 6-PowerVDFN
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