IRLI610ATU
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 200V 3.3A I2PAK
$0.15
Available to order
Reference Price (USD)
1+
$0.15000
500+
$0.1485
1000+
$0.147
1500+
$0.1455
2000+
$0.144
2500+
$0.1425
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IRLI610ATU from Fairchild Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IRLI610ATU delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.65A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK (TO-262)
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Vishay Siliconix
SQJ140ELP-T1_GE3
Nexperia USA Inc.
BUK7M15-60EX
Vishay Siliconix
SIDR140DP-T1-GE3
Toshiba Semiconductor and Storage
SSM6J412TU,LF
IXYS
IXTA6N100D2
Infineon Technologies
IPB60R055CFD7ATMA1
Panjit International Inc.
PJL9430A_R2_00001
Toshiba Semiconductor and Storage
XPH6R30ANB,L1XHQ
Central Semiconductor Corp
CMUDM7004 TR PBFREE
NXP USA Inc.