IRLMS1902TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 20V 3.2A MICRO6
$0.65
Available to order
Reference Price (USD)
3,000+
$0.19181
6,000+
$0.17944
15,000+
$0.16706
30,000+
$0.15840
Exquisite packaging
Discount
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Optimize your electronic systems with IRLMS1902TRPBF, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IRLMS1902TRPBF provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro6™(TSOP-6)
- Package / Case: SOT-23-6
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