ISL9V2540S3ST
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$1.30
Available to order
Reference Price (USD)
800+
$1.25075
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ISL9V2540S3ST Single IGBT by Fairchild Semiconductor sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Fairchild Semiconductor for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 430 V
- Current - Collector (Ic) (Max): 15.5 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 4V, 6A
- Power - Max: 166.7 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: 15.1 nC
- Td (on/off) @ 25°C: -/3.64µs
- Test Condition: 300V, 1kOhm, 5V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)
Related Products
STMicroelectronics
STGB15H60DF
Infineon Technologies
IKW40N65F5FKSA1
Microchip Technology
APT30GN60BG
Microchip Technology
APT60GT60BRG
Infineon Technologies
SKW20N60HSFKSA1
Infineon Technologies
IKW30N65NL5XKSA1
Infineon Technologies
IKP06N60TXKSA1
Rohm Semiconductor
RGPZ10BM40FHTL
STMicroelectronics
STGP35HF60W
IXYS