ISS55EP06LMXTSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 60V 180MA SOT23-3
$0.45
Available to order
Reference Price (USD)
1+
$0.45000
500+
$0.4455
1000+
$0.441
1500+
$0.4365
2000+
$0.432
2500+
$0.4275
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with ISS55EP06LMXTSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, ISS55EP06LMXTSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.5Ohm @ 180mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 0.59 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3-5
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Fairchild Semiconductor
HUFA75309T3ST
STMicroelectronics
STP8NK100Z
Rohm Semiconductor
RS1E350GNTB
Infineon Technologies
IPA70R360P7SXKSA1
Sanken
GKI03080
Vishay Siliconix
SIHH28N60E-T1-GE3
NXP USA Inc.
BUK9E3R2-40E,127
onsemi
FDP3652
Renesas Electronics America Inc
NP80N03MLE-S18-AY
onsemi