IXFA10N60P
IXYS
IXYS
MOSFET N-CH 600V 10A TO263
$4.22
Available to order
Reference Price (USD)
1+
$2.91000
50+
$2.34000
100+
$2.13200
500+
$1.72640
1,000+
$1.45600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IXFA10N60P, a high-quality Transistors - FETs, MOSFETs - Single from IXYS. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IXFA10N60P provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXFA)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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