IXFA3N120-TRR
IXYS
IXYS
MOSFET N-CH 1200V 3A TO263
$6.33
Available to order
Reference Price (USD)
1+
$6.33476
500+
$6.2714124
1000+
$6.2080648
1500+
$6.1447172
2000+
$6.0813696
2500+
$6.018022
Exquisite packaging
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Discover high-performance IXFA3N120-TRR from IXYS, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IXFA3N120-TRR delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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