IXFA50N20X3
IXYS
IXYS
MOSFET N-CH 200V 50A TO263
$4.39
Available to order
Reference Price (USD)
1+
$4.38930
500+
$4.345407
1000+
$4.301514
1500+
$4.257621
2000+
$4.213728
2500+
$4.169835
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXFA50N20X3 by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXFA50N20X3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 240W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
IXYS
IXTA1R4N120P
onsemi
FDB035N10A
Toshiba Semiconductor and Storage
SSM6H19NU,LF
Vishay Siliconix
SQ2315ES-T1_BE3
Fairchild Semiconductor
FDFS6N303
Vishay Siliconix
SI7615ADN-T1-GE3
onsemi
5LN01SS-TL-H
onsemi
FCH041N60F
NXP USA Inc.
BUK753R8-80E,127
IXYS