IXFB170N30P
IXYS
IXYS
MOSFET N-CH 300V 170A PLUS264
$30.78
Available to order
Reference Price (USD)
25+
$20.11120
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXFB170N30P by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXFB170N30P inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264™
- Package / Case: TO-264-3, TO-264AA
Related Products
Analog Devices Inc.
ADP3415LRMZ-REEL
STMicroelectronics
STWA57N65M5
Infineon Technologies
IPB054N08N3GATMA1
Microchip Technology
APT56F50B2
onsemi
FDA59N30
Vishay Siliconix
SIHP16N50C-BE3
onsemi
5HN01M-TL-E
IXYS
IXFX420N10T
Toshiba Semiconductor and Storage
SSM3K15ACT(TPL3)
Renesas Electronics America Inc