IXFK220N17T2
IXYS
IXYS
MOSFET N-CH 170V 220A TO264AA
$14.21
Available to order
Reference Price (USD)
25+
$9.06120
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXYS presents IXFK220N17T2, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IXFK220N17T2 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 170 V
- Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.3mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 31000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
Related Products
Panjit International Inc.
PJA3413_R1_00001
Infineon Technologies
IPD50R2K0CEAUMA1
Vishay Siliconix
SI4425DDY-T1-GE3
Microchip Technology
APT5020BVRG
Vishay Siliconix
SIHA17N80E-GE3
STMicroelectronics
STP40N65M2
Wolfspeed, Inc.
C3M0040120K
Toshiba Semiconductor and Storage
TK3A60DA(Q,M)
Rohm Semiconductor
RCJ331N25TL
Nexperia USA Inc.