IXFN110N60P3
IXYS
IXYS
MOSFET N-CH 600V 90A SOT227B
$38.29
Available to order
Reference Price (USD)
1+
$25.92000
10+
$23.97600
100+
$20.47680
500+
$18.14400
Exquisite packaging
Discount
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Enhance your circuit performance with IXFN110N60P3, a premium Transistors - FETs, MOSFETs - Single from IXYS. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IXFN110N60P3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1500W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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