IXFN40N90P
IXYS
IXYS
MOSFET N-CH 900V 33A SOT227B
$40.00
Available to order
Reference Price (USD)
10+
$28.02800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with IXFN40N90P by IXYS, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IXFN40N90P ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 695W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
Infineon Technologies
SPW12N50C3FKSA1
onsemi
NDS355AN
Panjit International Inc.
PJD85N03-AU_L2_000A1
onsemi
STD5P06VT4
Vishay Siliconix
SISA72DN-T1-GE3
Panjit International Inc.
PJD35P03_L2_00001
NXP USA Inc.
PMDPB760EN115
onsemi
FDMS8460
Fairchild Semiconductor
FQI5N15TU
Vishay Siliconix