IXFN60N80P
IXYS
IXYS
MOSFET N-CH 800V 53A SOT-227B
$40.00
Available to order
Reference Price (USD)
1+
$28.10000
10+
$25.99300
30+
$23.88500
100+
$22.19900
250+
$20.37252
500+
$19.38900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IXFN60N80P, a premium Transistors - FETs, MOSFETs - Single from IXYS. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IXFN60N80P is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1040W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
Vishay Siliconix
SQSA80ENW-T1_GE3
onsemi
NTMT190N65S3HF
IXYS
IXTH340N04T4
IXYS
IXTA08N50D2
Vishay Siliconix
SIDR402DP-T1-RE3
Infineon Technologies
IRF300P227
Goford Semiconductor
25P06
Infineon Technologies
IPP80N04S306AKSA1
Rohm Semiconductor
RTR025N05HZGTL
Fairchild Semiconductor