IXFN90N170SK
IXYS
IXYS
SICFET N-CH 1700V 90A SOT227B
$347.44
Available to order
Reference Price (USD)
1+
$347.44000
500+
$343.9656
1000+
$340.4912
1500+
$337.0168
2000+
$333.5424
2500+
$330.068
Exquisite packaging
Discount
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Upgrade your electronic designs with IXFN90N170SK by IXYS, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IXFN90N170SK ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 4V @ 36mA
- Gate Charge (Qg) (Max) @ Vgs: 376 nC @ 20 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 7340 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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