IXFP90N20X3M
IXYS
IXYS
MOSFET N-CH 200V 90A TO220
$9.40
Available to order
Reference Price (USD)
1+
$6.45000
50+
$5.28900
100+
$4.77300
500+
$3.99900
1,000+
$3.61200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXYS presents IXFP90N20X3M, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IXFP90N20X3M delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Isolated Tab
- Package / Case: TO-220-3 Full Pack, Isolated Tab
Related Products
Infineon Technologies
IPW65R060CFD7XKSA1
Fairchild Semiconductor
ISL9N310AD3ST
Vishay Siliconix
SI2304BDS-T1-GE3
NXP USA Inc.
BUK7514-60E,127
Renesas Electronics America Inc
BB502MBS-TR-E
Toshiba Semiconductor and Storage
TK32E12N1,S1X
Fairchild Semiconductor
FDS6676S
Infineon Technologies
IRFB38N20DPBF
onsemi
FDMS7570S
Alpha & Omega Semiconductor Inc.