IXFR120N20
IXYS
IXYS
MOSFET N-CH 200V 105A ISOPLUS247
$18.27
Available to order
Reference Price (USD)
30+
$16.61300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IXFR120N20, a premium Transistors - FETs, MOSFETs - Single from IXYS. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IXFR120N20 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247™
- Package / Case: TO-247-3
Related Products
Infineon Technologies
IPB100N10S305ATMA1
STMicroelectronics
STU65N3LLH5
onsemi
FDPF041N06BL1-F154
onsemi
NTD4855NT4G
IXYS
IXFH56N30X3
Vishay Siliconix
IRFR214TRLPBF
Microchip Technology
VN10KN3-G-P013
Vishay Siliconix
SIHFPS38N60L-GE3
onsemi
5LP01M-TL-E
IXYS