IXFX520N075T2
IXYS
IXYS
MOSFET N-CH 75V 520A PLUS247-3
$15.75
Available to order
Reference Price (USD)
30+
$10.04500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXYS presents IXFX520N075T2, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IXFX520N075T2 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 520A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3 Variant
Related Products
IXYS
IXTH20P50P
onsemi
FDMC010N08LC
Vishay Siliconix
SIAA40DJ-T1-GE3
Infineon Technologies
BSC105N10LSFGATMA1
Vishay Siliconix
SQ2309ES-T1_GE3
Microchip Technology
VP0550N3-G-P013
Infineon Technologies
IPU60R1K0CE
Rohm Semiconductor
RTF016N05FRATL
Infineon Technologies
BSC120N03LSGATMA1
Rohm Semiconductor