IXKN40N60C
IXYS
IXYS
MOSFET N-CH 600V 40A SOT-227B
$38.14
Available to order
Reference Price (USD)
10+
$24.64200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IXKN40N60C, a reliable Transistors - FETs, MOSFETs - Single by IXYS. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IXKN40N60C meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: Super Junction
- Power Dissipation (Max): 290W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
Renesas Electronics America Inc
2SK2738-E
Diodes Incorporated
DMP22M2UPS-13
Vishay Siliconix
SIB456DK-T1-GE3
Toshiba Semiconductor and Storage
TPN5R203PL,LQ
Infineon Technologies
IRLMS1503TRPBF
Toshiba Semiconductor and Storage
TK17N65W,S1F
Harris Corporation
RFD16N05LSM
Nexperia USA Inc.
PSMN030-60YS,115
Vishay Siliconix
SQJA00EP-T1_GE3
onsemi