IXTA08N100D2HV-TRL
IXYS
IXYS
MOSFET N-CH 1000V 800MA TO263HV
$2.29
Available to order
Reference Price (USD)
1+
$2.28689
500+
$2.2640211
1000+
$2.2411522
1500+
$2.2182833
2000+
$2.1954144
2500+
$2.1725455
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXTA08N100D2HV-TRL by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXTA08N100D2HV-TRL inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
- Vgs(th) (Max) @ Id: 4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263HV
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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