IXTA1R4N120P-TRL
IXYS
IXYS
MOSFET N-CH 1200V 1.4A TO263
$3.66
Available to order
Reference Price (USD)
1+
$3.65894
500+
$3.6223506
1000+
$3.5857612
1500+
$3.5491718
2000+
$3.5125824
2500+
$3.475993
Exquisite packaging
Discount
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Boost your electronic applications with IXTA1R4N120P-TRL, a reliable Transistors - FETs, MOSFETs - Single by IXYS. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IXTA1R4N120P-TRL meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 13Ohm @ 700mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 86W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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