IXTA1R6N100D2HV
IXYS
IXYS
MOSFET N-CH 1000V 1.6A TO263HV
$4.66
Available to order
Reference Price (USD)
50+
$2.58760
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXTA1R6N100D2HV by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXTA1R6N100D2HV inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263HV
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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