IXTA28P065T
IXYS
IXYS
MOSFET P-CH 65V 28A TO263
$2.60
Available to order
Reference Price (USD)
50+
$1.70000
Exquisite packaging
Discount
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Experience the power of IXTA28P065T, a premium Transistors - FETs, MOSFETs - Single from IXYS. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IXTA28P065T is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 65 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AA
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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