Shopping cart

Subtotal: $0.00

IXTA36N30P-TRL

IXYS
IXTA36N30P-TRL Preview
IXYS
MOSFET N-CH 300V 36A TO263
$3.15
Available to order
Reference Price (USD)
1+
$3.15076
500+
$3.1192524
1000+
$3.0877448
1500+
$3.0562372
2000+
$3.0247296
2500+
$2.993222
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

Rohm Semiconductor

RQ5E025TNTL

Diodes Incorporated

ZVN3306ASTZ

Renesas Electronics America Inc

2SJ687-ZK-E2-AY

Rohm Semiconductor

RS3E135BNGZETB

Rohm Semiconductor

RTF025N03FRATL

Infineon Technologies

IPP030N10N5AKSA1

Top