IXTB30N100L
IXYS
IXYS
MOSFET N-CH 1000V 30A PLUS264
$56.19
Available to order
Reference Price (USD)
25+
$43.07200
Exquisite packaging
Discount
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Enhance your circuit performance with IXTB30N100L, a premium Transistors - FETs, MOSFETs - Single from IXYS. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IXTB30N100L for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 20V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 800W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264™
- Package / Case: TO-264-3, TO-264AA
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