IXTH80N20L
IXYS
IXYS
MOSFET N-CH 200V 80A TO247
$14.87
Available to order
Reference Price (USD)
30+
$9.49167
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IXTH80N20L, a reliable Transistors - FETs, MOSFETs - Single by IXYS. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IXTH80N20L meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 32mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6160 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
IXYS
IXTK120N65X2
IXYS
IXFN44N80Q3
Texas Instruments
CSD18533KCS
Harris Corporation
RF1S23N06LE
Vishay Siliconix
IRFB11N50APBF
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJQ55P02A-F1-1100HF
Infineon Technologies
IPA50R380CEXKSA2
Alpha & Omega Semiconductor Inc.
AOT20N25L
Fairchild Semiconductor
FDP10AN06A0
Rectron USA