IXTH80N65X2
IXYS
IXYS
MOSFET N-CH 650V 80A TO247
$13.89
Available to order
Reference Price (USD)
1+
$10.80000
30+
$8.85600
120+
$7.99200
510+
$6.69600
1,020+
$6.04800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with IXTH80N65X2 by IXYS, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IXTH80N65X2 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 7753 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 890W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
onsemi
NTMFS5C410NLTT1G
onsemi
2N7000-D75Z
Diodes Incorporated
DMP3085LSS-13
Fairchild Semiconductor
IRF830B
STMicroelectronics
STK820
Vishay Siliconix
SQP25N15-52_GE3
onsemi
NTMS7N03R2
Infineon Technologies
IRFR8314TRPBF
Harris Corporation
IRF122
Diodes Incorporated