IXTK120N25P
IXYS
IXYS
MOSFET N-CH 250V 120A TO264
$15.69
Available to order
Reference Price (USD)
1+
$12.20000
25+
$10.00400
100+
$9.02800
500+
$7.56400
1,000+
$6.83200
Exquisite packaging
Discount
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Discover high-performance IXTK120N25P from IXYS, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IXTK120N25P delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 700W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXTK)
- Package / Case: TO-264-3, TO-264AA
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