IXTK32P60P
IXYS
IXYS
MOSFET P-CH 600V 32A TO264
$22.82
Available to order
Reference Price (USD)
1+
$15.62000
25+
$13.13520
100+
$12.07000
500+
$10.29500
1,000+
$9.94000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IXTK32P60P, a high-quality Transistors - FETs, MOSFETs - Single from IXYS. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IXTK32P60P provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 890W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXTK)
- Package / Case: TO-264-3, TO-264AA
Related Products
onsemi
IRLM120ATF
onsemi
NTB23N03RT4G
Nexperia USA Inc.
BSS84AKM,315
Wolfspeed, Inc.
C3M0065100K
Infineon Technologies
IPW60R070C6FKSA1
Toshiba Semiconductor and Storage
SSM3K7002KF,LXHF
Vishay Siliconix
SIHD9N60E-GE3
Vishay Siliconix
SIJA58DP-T1-GE3
STMicroelectronics
STL18N60M2
IXYS