Shopping cart

Subtotal: $0.00

IXTP10P50P

IXYS
IXTP10P50P Preview
IXYS
MOSFET P-CH 500V 10A TO220AB
$6.56
Available to order
Reference Price (USD)
1+
$5.04000
50+
$4.05000
100+
$3.69000
500+
$2.98800
1,000+
$2.52000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

Related Products

Toshiba Semiconductor and Storage

TK14A65W,S5X

Toshiba Semiconductor and Storage

TK6A50D(STA4,Q,M)

Fairchild Semiconductor

HUFA76445P3

Fairchild Semiconductor

FDU8780

Infineon Technologies

IPW65R190CFDFKSA2

Alpha & Omega Semiconductor Inc.

AO4480

Toshiba Semiconductor and Storage

SSM3J352F,LF

Nexperia USA Inc.

PMN20ENAX

Top