IXTP14N60X2
IXYS
IXYS
MOSFET N-CH 600V 14A TO220
$5.48
Available to order
Reference Price (USD)
1+
$5.48000
500+
$5.4252
1000+
$5.3704
1500+
$5.3156
2000+
$5.2608
2500+
$5.206
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IXTP14N60X2, a versatile Transistors - FETs, MOSFETs - Single solution from IXYS, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Fairchild Semiconductor
FQD1N60TM
onsemi
FDMA530PZ
Alpha & Omega Semiconductor Inc.
AON7528
Micro Commercial Co
SI2301A-TP
Littelfuse Inc.
LSIC1MO120G0025
Vishay Siliconix
SIR680ADP-T1-RE3
Yangzhou Yangjie Electronic Technology Co.,Ltd
2N7002W-F2-0000HF
onsemi
FDMS015N04B
Nexperia USA Inc.
BUK9M7R2-40EX
NTE Electronics, Inc