Shopping cart

Subtotal: $0.00

IXTQ75N10P

IXYS
IXTQ75N10P Preview
IXYS
MOSFET N-CH 100V 75A TO3P
$5.44
Available to order
Reference Price (USD)
30+
$3.01500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3

Related Products

Rohm Semiconductor

RSJ400N06TL

Vishay Siliconix

SI4435FDY-T1-GE3

STMicroelectronics

STF6N52K3

Infineon Technologies

BSO301SPHXUMA1

STMicroelectronics

STD10NM60ND

NXP USA Inc.

PMV170UN,215

Microchip Technology

TP2104N3-G-P003

Infineon Technologies

IPB180N04S4L01ATMA1

Top