IXTT3N200P3HV
IXYS
IXYS
MOSFET N-CH 2000V 3A TO268
$50.69
Available to order
Reference Price (USD)
1+
$37.00000
30+
$31.45000
120+
$29.23000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IXTT3N200P3HV from IXYS, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IXTT3N200P3HV delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 2000 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268HV (IXTT)
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
onsemi
FQD6N40CTM
Rohm Semiconductor
RSR025N03HZGTL
Vishay Siliconix
SI3437DV-T1-BE3
Toshiba Semiconductor and Storage
TK8A45DA(STA4,Q,M)
Infineon Technologies
IPD80R360P7ATMA1
Infineon Technologies
IPB60R520CP
onsemi
NVTFS4C02NWFTAG
Diodes Incorporated
ZVP4424GTA
IXYS
IXTQ30N50L2
Transphorm